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2SK2159 - N-CHANNEL MOS FET

Features

  • Capable of drive gate with 1.5 V.
  • Small RDS(on) RDS(on) = 0.7 Ω MAX. @VGS = 1.5 V, ID = 0.1 A RDS(on) = 0.3 Ω MAX. @VGS = 4.0 V, ID = 1.0 A 0.47 1.5 ± 0.06 3.0 0.42 ± 0.06 0.41+0.03.
  • 0.05.

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Datasheet preview – 2SK2159

Datasheet Details

Part number 2SK2159
Manufacturer NEC
File Size 62.31 KB
Description N-CHANNEL MOS FET
Datasheet download datasheet 2SK2159 Datasheet
Additional preview pages of the 2SK2159 datasheet.

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Full PDF Text Transcription

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DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2159 N-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING The 2SK2159 is an N-channel vertical type MOS FET featuring an operating voltage as low as 1.5 V. Because it can be driven on a low voltage and it is not necessary to consider driving current, the 2SK2159 is suitable for driving actuators of low-voltage portable systems such as headphone stereo sets and camcorders. 0.8 MIN. PACKAGE DIMENSIONS (in millimeters) 4.5 ± 0.1 1.6 ± 0.2 4.0 ± 0.25 2.5 ± 0.1 1.5 ± 0.1 1 0.42 ± 0.06 2 3 FEATURES • Capable of drive gate with 1.5 V • Small RDS(on) RDS(on) = 0.7 Ω MAX. @VGS = 1.5 V, ID = 0.1 A RDS(on) = 0.3 Ω MAX. @VGS = 4.0 V, ID = 1.0 A 0.47 1.5 ± 0.06 3.0 0.42 ± 0.06 0.41+0.03 –0.
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