2SK2158
FEATURES
- Capable of drive gate with 1.5 V
- Because of high input impedance, there is no need to consider driving current.
- Bias resistance can be omitted, enabling reduction in total number of parts.
0.95 0.95
+0.1 +0.1
Marking
1.1 to 1.4
0 to 0.1
- 0.06
Marking: G23 PIN CONNECTION 1. Source (S) 2. Gate (G) 3. Drain (D)
EQUIVALENT CIRCUIT
3 Internal diode
2 Gate protection diode 1
ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C)
PARAMETER Drain to Source Voltage Gate to Source Voltage Drain Current (DC) Drain Current (pulse) SYMBOL VDSS VGSS ID(DC) ID(pulse) PW ≤ 10 ms, Duty Cycle ≤ 50 % VGS = 0 VDS = 0 TEST CONDITIONS RATINGS 50 ± 7.0 ± 0.1 ± 0.2 UNIT V V A A
Total Power Dissipation Channel Temperature Storage Temperature
PT Tch Tstg
200 150
- 55 to +150
- 0.05
3 m W ˚C ˚C
Document No. D11234EJ1V0DS00 (1st edition) Date Published June 1996 P Printed in Japan
©
ELECTRICAL CHARACTERISTICS (TA = 25 ˚C)
PARAMETER Drain Cut-off Current Gate Leakage...
