Datasheet4U Logo Datasheet4U.com

NCEP60T20A - N-Channel Super Trench Power MOSFET

Description

The NCEP60T20A uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance.

Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg.

Features

  • VDS =60V,ID =200A RDS(ON)=1.8mΩ (typical) @ VGS=10V RDS(ON)=2.1mΩ (typical) @ VGS=4.5V Schematic diagram.
  • Excellent gate charge x RDS(on) product.
  • Very low on-resistance RDS(on).
  • 175 °C operating temperature.
  • Pb-free lead plating.
  • 100% UIS tested Marking and pin assignment.

📥 Download Datasheet

Datasheet Details

Part number NCEP60T20A
Manufacturer NCE Power Semiconductor
File Size 384.60 KB
Description N-Channel Super Trench Power MOSFET
Datasheet download datasheet NCEP60T20A Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
NCEP60T18 N-Channel MOSFET VBsemi
NCEP0135A N-Channel 100V MOSFET VBsemi
NCEP01T15 N-Channel 100V MOSFET VBsemi
NCEP01T30T N-Channel MOSFET VBsemi
NCEP40T11G N-Channel MOSFET VBsemi

Other Datasheets by NCE Power Semiconductor

Part Number Description
NCEP60T12A N-Channel Super Trench Power MOSFET
NCEP60T12AK N-Channel Super Trench Power MOSFET
NCEP60T12K N-Channel Super Trench Power MOSFET
NCEP60T15AG N-Channel Super Trench Power MOSFET
NCEP60T15G N-Channel Super Trench Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
http://www.ncepower.com Pb Free Product NCEP60T20A NCE N-Channel Super Trench Power MOSFET Description The NCEP60T20A uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency switching and synchronous rectification. General Features ● VDS =60V,ID =200A RDS(ON)=1.8mΩ (typical) @ VGS=10V RDS(ON)=2.1mΩ (typical) @ VGS=4.
Published: |