NCEP60T18 mosfet equivalent, n-channel super trench power mosfet.
* VDS =60V,ID =180A RDS(ON) < 2.9mΩ @ VGS=10V (Typ:2.5mΩ)
* Excellent gate charge x RDS(on) product
* Very low on-resistance RDS(on)
* 150 °C operating te.
The NCEP60T18 uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. .
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