NCEP60T12A mosfet equivalent, n-channel super trench power mosfet.
* VDS =60V,ID =120A RDS(ON) < 4.0mΩ @ VGS=10V (Typ:3.5mΩ) RDS(ON) < 5.0mΩ @ VGS=4.5V (Typ:4.0mΩ)
* Excellent gate charge x RDS(on) product
* Very low on-resis.
The NCEP60T12A uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg..
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