NCE30P30G mosfet equivalent, p-channel enhancement mode power mosfet.
* VDS = -30V,ID = -30A RDS(ON) < 10mΩ @ VGS=-10V RDS(ON) < 15mΩ @ VGS=-4.5V
* High power and current handing capability
* Lead free product is acquired
* .
General Features
* VDS = -30V,ID = -30A RDS(ON) < 10mΩ @ VGS=-10V RDS(ON) < 15mΩ @ VGS=-4.5V
* High power and .
The NCE30P30G uses advanced trench technology to provide excellent RDS(ON), This device is suitable for use as a load switch or in PWM applications.
General Features
* VDS = -30V,ID = -30A RDS(ON) < 10mΩ @ VGS=-10V RDS(ON) < 15mΩ @ VGS=-4.5V
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