NCE30P15S mosfet equivalent, p-channel enhancement mode power mosfet.
* VDS = -30V,ID = -15A RDS(ON) < 12mΩ @ VGS=-10V
Schematic diagram
* High power and current handing capability
* Lead free product is acquired
* Surface.
General Features
* VDS = -30V,ID = -15A RDS(ON) < 12mΩ @ VGS=-10V
Schematic diagram
* High power and current.
The NCE30P15S uses advanced trench technology to provide excellent RDS(ON), This device is suitable for use as a load switch or in PWM applications.
General Features
* VDS = -30V,ID = -15A RDS(ON) < 12mΩ @ VGS=-10V
Schematic diagram
* High.
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