NCE30P50G datasheet, mosfet equivalent, NCEPOWER

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Features and benefits

* VDS =-30V,ID =-50A RDS(ON) < 5.5mΩ @ VGS=-10V
* High density cell design for ultra low Rdson
* Fully characterized avalanche voltage and current
* Good .

Application

General Features
* VDS =-30V,ID =-50A RDS(ON) < 5.5mΩ @ VGS=-10V
* High density cell design for ultra low Rdso.

Description

The NCE30P50G uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features
* VDS =-30V,ID =-50A RDS(ON) < 5.5mΩ @ VGS=-10V
* High density cel.

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