NCE30H12 mosfet equivalent, nce n-channel enhancement mode power mosfet.
* VDS =30V,ID =120A RDS(ON) <3.5mΩ @ VGS=10V
(Typ:3.0mΩ)
Schematic diagram
* High density cell design for ultra low Rdson
* Fully characterized avalanche v.
General Features
* VDS =30V,ID =120A RDS(ON) <3.5mΩ @ VGS=10V
(Typ:3.0mΩ)
Schematic diagram
* High density .
The NCE30H12 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
General Features
* VDS =30V,ID =120A RDS(ON) <3.5mΩ @ VGS=10V
(Typ:3.0mΩ)
Schematic di.
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