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NCE30H15 - N-Channel Enhancement Mode Power MOSFET

Description

The NCE30H15 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

It can be used in a wide variety of applications.

Features

  • VDS =30V,ID =150A RDS(ON).

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Datasheet Details

Part number NCE30H15
Manufacturer NCE Power Semiconductor
File Size 360.79 KB
Description N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet NCE30H15 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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http://www.ncepower.com Pb Free Product NCE30H15 NCE N-Channel Enhancement Mode Power MOSFET Description The NCE30H15 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =30V,ID =150A RDS(ON) <3.0 mΩ @ VGS=10V RDS(ON) <4.0mΩ @ VGS=4.
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