NCE30H11G mosfet equivalent, n-channel enhancement mode power mosfet.
* VDS =30V,ID =110A RDS(ON) <2.4 mΩ @ VGS=10V RDS(ON) <3.0mΩ @ VGS=4.5V
* High density cell design for ultra low Rdson
* Fully characterized avalanche voltage.
General Features
* VDS =30V,ID =110A RDS(ON) <2.4 mΩ @ VGS=10V RDS(ON) <3.0mΩ @ VGS=4.5V
* High density cell d.
The NCE30H11G uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
General Features
* VDS =30V,ID =110A RDS(ON) <2.4 mΩ @ VGS=10V RDS(ON) <3.0mΩ @ VGS=4.5.
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