NCE3080I mosfet equivalent, nce n-channel enhancement mode power mosfet.
* VDS =30V,ID =80A RDS(ON) <6.5mΩ @ VGS=10V RDS(ON) < 10mΩ @ VGS=5V
Schematic diagram
* High density cell design for ultra low Rdson
* Fully characterized a.
General Features
* VDS =30V,ID =80A RDS(ON) <6.5mΩ @ VGS=10V RDS(ON) < 10mΩ @ VGS=5V
Schematic diagram
* Hig.
The NCE3080I uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
General Features
* VDS =30V,ID =80A RDS(ON) <6.5mΩ @ VGS=10V RDS(ON) < 10mΩ @ VGS=5V
Sc.
Image gallery
TAGS
Download (Size : 344.03KB)