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NCE0260P Datasheet, NCE Power Semiconductor

NCE0260P mosfet equivalent, n-channel enhancement mode power mosfet.

NCE0260P Avg. rating / M : 1.0 rating-13

datasheet Download (Size : 325.72KB)

NCE0260P Datasheet
NCE0260P Avg. rating / M : 1.0 rating-13

datasheet Download (Size : 325.72KB)

NCE0260P Datasheet

Features and benefits


* VDS =200V,ID =60A RDS(ON) <32mΩ @ VGS=10V
* High density cell design for ultra low Rdson
* Fully characterized avalanche voltage and current
* Good stab.

Application

General Features
* VDS =200V,ID =60A RDS(ON) <32mΩ @ VGS=10V
* High density cell design for ultra low Rdson

Description

The NCE0260P uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features
* VDS =200V,ID =60A RDS(ON) <32mΩ @ VGS=10V
* High density cell des.

Image gallery

NCE0260P Page 1 NCE0260P Page 2 NCE0260P Page 3

TAGS

NCE0260P
N-Channel
Enhancement
Mode
Power
MOSFET
NCE Power Semiconductor

Manufacturer


NCE Power Semiconductor

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