NCE0205I mosfet equivalent, n-channel enhancement mode power mosfet.
* VDS =200V,ID =5A RDS(ON) < 580mΩ @ VGS=10V
（Typ：520mΩ）
* High density cell design for ultra low Rdson
* Fully characterized avalanche voltage and current .
General Features
* VDS =200V,ID =5A RDS(ON) < 580mΩ @ VGS=10V
（Typ：520mΩ）
* High density cell design for ult.
The NCE0205I uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
General Features
* VDS =200V,ID =5A RDS(ON) < 580mΩ @ VGS=10V
（Typ：520mΩ）
* High d.
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