NCE0260 N-Channel Enhancement Mode Power MOSFET
● VDS =200V,ID =60A RDS(ON) <32mΩ @ VGS=10V
● High density cell design for ultra low Rdson
● Fully characterized avalanche voltage and current
● Good stab.
General Features
● VDS =200V,ID =60A RDS(ON) <32mΩ @ VGS=10V
● High density cell design for ultra low Rdson
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