NCE30H21 mosfet equivalent, n-channel enhancement mode power mosfet.
* VDS =30V,ID =210A RDS(ON) < 2.5mΩ @ VGS=10V (Typ:1mΩ)
* High density cell design for ultra low Rdson
* Fully characterized Avalanche voltage and current
GENERAL FEATURES
* VDS =30V,ID =210A RDS(ON) < 2.5mΩ @ VGS=10V (Typ:1mΩ)
* High density cell design for ultra .
The NCE30H21 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
GENERAL FEATURES
* VDS =30V,ID =210A RDS(ON) < 2.5mΩ @ VGS=10V (Typ:1mΩ)
* High dens.
Image gallery
TAGS
Download (Size : 324.15KB)