The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MMBD2837LT1/D
Monolithic Dual Switching Diodes
ANODE 1 2 ANODE
MMBD2837LT1 MMBD2838LT1
3 CATHODE
3 1
MAXIMUM RATINGS (EACH DIODE)
Rating Peak Reverse Voltage D.C. Reverse Voltage Peak Forward Current Average Rectified Current MMBD2837LT1 MMBD2838LT1 Symbol VRM VR IFM IO Value 75 30 50 450 300 150 100 Unit Vdc Vdc mAdc mAdc
2
CASE 318 – 08, STYLE 9 SOT– 23 (TO – 236AB)
THERMAL CHARACTERISTICS
Characteristic Total Device Dissipation FR– 5 Board(1) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate,(2) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol PD Max 225 1.8 RqJA PD 556 300 2.
MMBD2838LT1 Datasheet
