MMBD2837LT1
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MMBD2837LT1/D
Monolithic Dual Switching Diodes
ANODE 1 2 ANODE
MMBD2837LT1 MMBD2838LT1
3 CATHODE
3 1
MAXIMUM RATINGS (EACH DIODE)
Rating Peak Reverse Voltage D.C. Reverse Voltage Peak Forward Current Average Rectified Current MMBD2837LT1 MMBD2838LT1 Symbol VRM VR IFM IO Value 75 30 50 450 300 150 100 Unit Vdc Vdc m Adc m Adc
CASE 318
- 08, STYLE 9 SOT- 23 (TO
- 236AB)
THERMAL CHARACTERISTICS
Characteristic Total Device Dissipation FR- 5 Board(1) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate,(2) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol PD Max 225 1.8 Rq JA PD 556 300 2.4 Rq JA TJ, Tstg 417
- 55 to +150 Unit m W m W/°C °C/W m W m W/°C °C/W °C
DEVICE MARKING
MMBD2837LT1 = A5; MMBD2838LT1 = MA6
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (EACH DIODE)
Characteristic Symbol Min...
