MMBD2835LT1
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MMBD2835LT1/D
Monolithic Dual Switching Diodes
MMBD2835LT1 MMBD2836LT1
ANODE 3
CATHODE 1 2 CATHODE
1 2
MAXIMUM RATINGS (EACH DIODE)
Rating Reverse Voltage Forward Current MMBD2835LT1 MMBD2836LT1 Symbol VR IF Value 35 75 100 Unit Vdc m Adc
CASE 318
- 08, STYLE 12 SOT- 23 (TO
- 236AB)
THERMAL CHARACTERISTICS
Characteristic Total Device Dissipation FR- 5 Board(1) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate,(2) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol PD Max 225 1.8 Rq JA PD 556 300 2.4 Rq JA TJ, Tstg 417
- 55 to +150 Unit m W m W/°C °C/W m W m W/°C °C/W °C
DEVICE MARKING
MMBD2835LT1 = A3X; MMBD2836LT1 = A2X
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (EACH DIODE)
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
Reverse Breakdown Voltage (IR = 100 µAdc) Reverse...
