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2N1195 - PNP germanium mesa transistors

Download the 2N1195 datasheet PDF. This datasheet also covers the 2N1141 variant, as both devices belong to the same pnp germanium mesa transistors family and are provided as variant models within a single manufacturer datasheet.

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Note: The manufacturer provides a single datasheet file (2N1141-Motorola.pdf) that lists specifications for multiple related part numbers.

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Other Datasheets by Motorola Semiconductor (now NXP Semiconductors)

Part Number Description
2N1190 PNPgermanium transistors
2N1191 PNPgermanium transistors
2N1192 PNPgermanium transistors
2N1193 PNPgermanium transistors
2N1194 PNPgermanium transistors

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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2N 1132,A (SILICON) For Specifications, See 2N722 Data 2N 1141 thru 2N 1143 (GERMANIUM) 2Nl142 JAN AVAILABLE 2N1195 2N1195 JAN AVAILABLE PNP germanium mesa transistors for amplifier, driver, oscillator and doubler applications. CASE 31 (TO-5) Collector connected to C8se MAXIMUM RATINGS Rating Symbol 2N1141 2N1142 2N1143 2N1195 Unit Collector-Base Voltage Emitter-Base Voltage Collector Current-Continuous Base Current Emitter Current-Continuous Total Device Dissipation @ TA =25°C Derate above 25°C Total Device Dissipation @ TC =25°C Derate above 25°C Collector Dissipation @ TA =25°C Derate above 25°C Operating and storage Junction Temperature Range VCB 35 VEB 1.0 IC 100 IB 50 IE 100 PD 300 4.0 PD 750 10 Pc - - TJ' Tstg 30 25 0.7 0.
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