Datasheet4U Logo Datasheet4U.com

2N1194 - PNPgermanium transistors

Download the 2N1194 datasheet PDF. This datasheet also covers the 2N1191 variant, as both devices belong to the same pnpgermanium transistors family and are provided as variant models within a single manufacturer datasheet.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (2N1191-Motorola.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
2N1131 LOW POWER PNP SILICON TRANSISTOR Microsemi
2N1131 SILICON PNP TRANSISTOR Central Semiconductor
2N1131L LOW POWER PNP SILICON TRANSISTOR Microsemi
2N1132 LOW POWER PNP SILICON TRANSISTOR Microsemi
2N1132 SILICON PLANAR PNP TRANSISTOR TT

Other Datasheets by Motorola Semiconductor (now NXP Semiconductors)

Part Number Description
2N1190 PNPgermanium transistors
2N1191 PNPgermanium transistors
2N1192 PNPgermanium transistors
2N1193 PNPgermanium transistors
2N1195 PNP germanium mesa transistors

Full PDF Text Transcription

Click to expand full text
2N1191 thru 2N1194 (GERMANIUM) All leads isolated PNPgermanium transistors for high-gain audio amplifier and switching applications. MAXIMUM RATINGS Rating Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (Continuous) Storage and. Operating Temperature Collector Dissipation in,Ambient (Derate 2.67 mWrC above 25°C) Thermal Resistance (Junction to Ambient) Thermal Resistance (Junction t() Case) Symbol VCB VCER VEB IC Tstg' TJ PD 9JA 9JC Value 40 25 25 200 -65 to +100 200 0.375 0.250 Unit Vdc Vdc Vdc mAdc DC mW °C/mW °C/mW ELECTRICAL CHARACTERISTICS = (TA 25°C unless otherwise noted) Characteristic Collector-Base Cutoff Current (VCB = 25 V, IE = 0) (VCB = l.
Published: |