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2N1190 - PNPgermanium transistors

Download the 2N1190 datasheet PDF. This datasheet also covers the 2N1189 variant, as both devices belong to the same pnpgermanium transistors family and are provided as variant models within a single manufacturer datasheet.

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Note: The manufacturer provides a single datasheet file (2N1189-Motorola.pdf) that lists specifications for multiple related part numbers.

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Other Datasheets by Motorola Semiconductor (now NXP Semiconductors)

Part Number Description
2N1191 PNPgermanium transistors
2N1192 PNPgermanium transistors
2N1193 PNPgermanium transistors
2N1194 PNPgermanium transistors
2N1195 PNP germanium mesa transistors

Full PDF Text Transcription

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2Nl189 2Nl190(GERMANIUM) CASE31{l) ' (TO·5) All leads isolated PNPgermanium transistors for high-gain audio amplifier and switching applications.· MAXIMUM RATINGS Rating Collector-Base Voltage Symbol Value Unit VCB 45 Vdc Collector-Emitter Voltage VCER 30 Vdc Emitter-Base Voltage VEB 15 Vdc Collector Current (Continuous) Junction, Storage Temperature Collector Dissipation, Ambient (Derate 2.67 mW1° C above 25° C) Thermal Resistance (Junction to Ambient) Thermal Resistance (Junction to Case) ·Limited by pawerdissipation. IC TJ , Tstg PD 9JA ~C 500*· -65 to +100 200 0.375 0.
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