RD100HHF1 fet equivalent, mos fet.
9.6+/-0.3
0.1 -0.01
3
+0.05
R1.6+/-0.15 4.5+/-0.7 6.2+/-0.7
APPLICATION
For output stage of high power amplifiers in HF Band mobile radio sets.
5.0+/-0.3
18.5+/-0..
OUTLINE DRAWING
4-C2
24.0+/-0.6
*High power and High Gain: Pout>100W, Gp>11.5dB @Vdd=12.5V,f=30MHz
*High Eff.
RD100HHF1 is a MOS FET type transistor specifically designed for HF High power amplifiers applications. OUTLINE DRAWING
4-C2
24.0+/-0.6
*High power and High Gain: Pout>100W, Gp>11.5dB @Vdd=12.5V,f=30MHz
*High Efficiency: 60%typ.on HF Band
.
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