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RD1006LN - High-Speed Switching Diode

Features

  • Diffused Junction Silicon Diode Low VF.
  • High-Speed Switching Diode High breakdown voltage (VRRM=600V). High reliability. One-point fixing type plastic molded package facilitating easy mounting and heat dissipation. Fast reverse recovery time. Low noise at the time of reverse recovery. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Repetitive Peak Reverse Voltage Nonrepetitive Peak Reverse Surge Voltage Average Output Curr.

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Other Datasheets by SANYO (now Panasonic)

Part Number Description
RD1006LS Ultrahigh-Speed Switching Diode
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.DataSheet.co.kr Ordering number : ENA1442 RD1006LN SANYO Semiconductors DATA SHEET RD1006LN Features • • • • • Diffused Junction Silicon Diode Low VF • High-Speed Switching Diode High breakdown voltage (VRRM=600V). High reliability. One-point fixing type plastic molded package facilitating easy mounting and heat dissipation. Fast reverse recovery time. Low noise at the time of reverse recovery.
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