RD1006LN
Features
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- Diffused Junction Silicon Diode
Low VF
- High-Speed Switching Diode
High breakdown voltage (VRRM=600V). High reliability. One-point fixing type plastic molded package facilitating easy mounting and heat dissipation. Fast reverse recovery time. Low noise at the time of reverse recovery.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Repetitive Peak Reverse Voltage Nonrepetitive Peak Reverse Surge Voltage Average Output Current Peak Output Current Surge Forward Current Junction Temperature Storage Temperature Symbol VRRM VRSM Conditions Ratings 600 600 10 PW≤100μs, duty cycle≤50% Sine wave 10ms 40 180 150 --55 to +150 Unit V V A A A °C °C
IO IOP IFSM
Tj Tstg
Electrical Characteristics at Ta=25°C
Parameter Reverse Voltage Forward Voltage Reverse Current Reverse Recovery Time Thermal Resistance Symbol VR VF IR trr1 trr2 Rth(j-c) IR=1m A IF=10A VR=600V IF=10A, di / dt=100A/μs IF=0.5A, IR=1A Junction-Case : Smoothed DC 16 3.22 Conditions Ratings min 600...
