Click to expand full text
www.DataSheet.co.kr
MITSUBISHI RF POWER MOS FET
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RD100HHF1
25.0+/-0.3 7.0+/-0.5 11.0+/-0.3
1
Silicon MOSFET Power Transistor 30MHz,100W DESCRIPTION
RD100HHF1 is a MOS FET type transistor specifically designed for HF High power amplifiers applications. OUTLINE DRAWING
4-C2
24.0+/-0.6
•High power and High Gain: Pout>100W, Gp>11.5dB @Vdd=12.5V,f=30MHz •High Efficiency: 60%typ.on HF Band
2
10.0+/-0.3
FEATURES
9.6+/-0.3
0.1 -0.01
3
+0.05
R1.6+/-0.15 4.5+/-0.7 6.2+/-0.7
APPLICATION
For output stage of high power amplifiers in HF Band mobile radio sets.
5.0+/-0.3
18.5+/-0.3
PIN 1.DRAIN 2.SOURCE 3.
RD100HHF1 Datasheet
