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Mitsubishi

RD100HHF1C Datasheet Preview

RD100HHF1C Datasheet

Silicon RF Power MOS FET

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< Silicon RF Power MOS FET (Discrete) >
RD100HHF1C
RoHS Compliance, Silicon MOSFET Power Transistor 30MHz,100W
DESCRIPTION
RD100HHF1C is a MOS FET type transistor specifically
designed for HF High power amplifiers applications.
OUTLINE DRAWING
7.0±0.5
25.0±0.3
11.0±0.30
FEATURES
High power and High Gain:
Pout>100W, Gp>11.5dB @VDD=12.5V,f=30MHz
High Efficiency: 60%typ.on HF Band
4-C2
1
2
3
5.0±0.3
18.5±0.3
2-R1.6 ± 0.15
APPLICATION
For output stage of high power amplifiers in HF
Band mobile radio sets.
6.2±0.7
4.5±0.7
0.1+-00..0051
PIN
1. DRAIN
2. SOURCE
3. GATE
UNIT:mm
RoHS COMPLIANT
RD100HHF1C-501 is a RoHS compliant products.
.
ABSOLUTE MAXIMUM RATINGS
(Tc=25°C UNLESS OTHERWISE NOTED)
SYMBOL
PARAMETER
CONDITIONS
VDSS
VGSS
Pch
Pin
ID
Drain to source voltage
Gate to source voltage
Channel dissipation
Input power
Drain current
VGS=0V
VDS=0V
Tc=25°C
ZG=ZL=50
-
Tch Channel temperature
-
Tstg Storage temperature
-
Rth j-c
Thermal resistance
junction to case
Note 1: Above parameters are guaranteed independently.
RATINGS
50
+/-20
176.5
12.5
25
175
-40 to +175
0.85
UNIT
V
V
W
W
A
°C
°C
°C/W
Publication Date : Jun.2019
1




Mitsubishi

RD100HHF1C Datasheet Preview

RD100HHF1C Datasheet

Silicon RF Power MOS FET

No Preview Available !

< Silicon RF Power MOS FET (Discrete) >
RD100HHF1C
RoHS Compliance, Silicon MOSFET Power Transistor 30MHz,100W
ELECTRICAL CHARACTERISTICS
SYMBOL
PARAMETER
(Tc=25°C UNLESS OTHERWISE NOTED)
CONDITIONS
LIMITS
MIN TYP MAX.
IDSS Zerogate voltage drain current VDS=17V, VGS=0V
- - 10
IGSS Gate to source leak current VGS=10V, VDS=0V
--1
VTH Gate threshold voltage
VDS=12V, IDS=1mA
1.5 - 4.5
Pout Output power
f=30MHz ,VDD=12.5V
100 110
-
D Drain efficiency
Pin=7W, IDQ=1.0A
55 60
-
Load VSWR tolerance
VDD=15.2V,Pout=100W(Pin Control)
No destroy
f=30MHz,IDQ=1.0A,ZG=50
Load VSWR=20:1(All Phase)
Note : Above parameters , ratings , limits and conditions are subject to change.
UNIT
uA
uA
V
W
%
-
Publication Date : Jun.2019
2


Part Number RD100HHF1C
Description Silicon RF Power MOS FET
Maker Mitsubishi
PDF Download

RD100HHF1C Datasheet PDF






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