RD100HHF1C Datasheet Silicon Rf Power Mos Fet

Manufacturer: Mitsubishi Electric

Overview: < Silicon RF Power MOS FET (Discrete) > RD100HHF1C RoHS Compliance, Silicon MOSFET Power Transistor.

Datasheet Details

Part number	RD100HHF1C
Manufacturer	Mitsubishi Electric
File Size	466.83 KB
Description	Silicon RF Power MOS FET
Datasheet	RD100HHF1C-Mitsubishi.pdf

General Description

RD100HHF1C is a MOS FET type transistor specifically designed for HF High power amplifiers applications.

OUTLINE DRAWING 7.0±0.5 25.0±0.3 11.0±0.30

Key Features

High power and High Gain: Pout>100W, Gp>11.5dB @VDD=12.5V,f=30MHz High Efficiency: 60%typ. on HF Band 17.0± 0.5 4-C2 1 2 9.6± 0.3 10.0± 0.3 3 5.0±0.3 18.5±0.3 2-R1.6 ± 0.15 3.3± 0.2.

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Similar Datasheet

Brand Logo	Part Number	Description	Manufacturer
	RD100HHF1	MOS FET	Mitsubishi Electric Semiconductor

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