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Mitsubishi Electric Semiconductor

CR05AS Datasheet Preview

CR05AS Datasheet

LOW POWER USE NON-INSULATED TYPE/ PLANAR PASSIVATION TYPE

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CR05AS
MITSUBISHI SEMICONDUCTOR THYRISTOR
CR05AS
LOW POWER USE
NON-INSULATED TYPE, PLANAR PASSIVATION TYPE
OUTLINE DRAWING
Dimensions
in mm
• IT (AV) ........................................................................ 0.5A
• VDRM ..............................................................200V/400V
• IGT ......................................................................... 100µA
APPLICATION
Solid state relay, strobe flasher, ignitor, hybrid IC
4.4±0.1
1.6±0.2
1.5±0.1
123
0.5±0.07
0.4±0.07
1.5±0.1 1.5±0.1
(Back side)
0.4
+0.03
–0.05
2
3
1
1 T1 TERMINAL
2 T2 TERMINAL
3 GATE TERMINAL
SOT-89
MAXIMUM RATINGS
Symbol
Parameter
VRRM
VRSM
VR (DC)
VDRM
VD (DC)
Repetitive peak reverse voltage
Non-repetitive peak reverse voltage
DC reverse voltage
Repetitive peak off-state voltage
DC off-state voltage
V1
V1
4 (marked “CB”)
200
300
160
200
160
Voltage class
8 (marked “CD”)
400
500
320
400
320
Unit
V
V
V
V
V
Symbol
IT (RMS)
IT (AV)
ITSM
I2t
Parameter
RMS on-state current
Average on-state current
Surge on-state current
I2t for fusing
PGM Peak gate power dissipation
PG (AV)
Average gate power dissipation
VFGM
Peak gate forward voltage
VRGM
Peak gate reverse voltage
IFGM
Peak gate forward current
Tj Junction temperature
Tstg Storage temperature
— Weight
V1. With Gate-to-cathode resistance RGK=1k
Conditions
Commercial frequency, sine half wave, 180° conduction, Ta=57°C V2
60Hz sine half wave 1 full cycle, peak value, non-repetitive
Value corresponding to 1 cycle of half wave 60Hz, surge on-state
current
Typical value
Ratings
0.79
0.5
10
0.4
0.1
0.01
6
6
0.1
–40 ~ +125
–40 ~ +125
48
Unit
A
A
A
A2s
W
W
V
V
A
°C
°C
mg
Feb.1999




Mitsubishi Electric Semiconductor

CR05AS Datasheet Preview

CR05AS Datasheet

LOW POWER USE NON-INSULATED TYPE/ PLANAR PASSIVATION TYPE

No Preview Available !

MITSUBISHI SEMICONDUCTOR THYRISTOR
CR05AS
LOW POWER USE
NON-INSULATED TYPE, PLANAR PASSIVATION TYPE
ELECTRICAL CHARACTERISTICS
Symbol
Parameter
Test conditions
Min.
IRRM
Repetitive peak reverse current
Tj=125°C, VRRM applied
IDRM
Repetitive peak off-state current
Tj=125°C, VDRM applied, RGK=1k
VTM On-state voltage
VGT Gate trigger voltage
Ta=25°C, ITM=1.5A, instantaneous value
Ta=25°C, VD=6V, IT=0.1A V4
VGD Gate non-trigger voltage
IGT Gate trigger current
Tj=125°C, VD=1/2VDRM, RGK=1k
Tj=25°C, VD=6V, IT=0.1A V4
IH
Rth (j-a)
Holding current
Thermal resistance
Tj=25°C, VD=12V, RGK=1k
Junction to ambient V2
V2. Soldering with ceramic plate (25mm × 25mm × t0.7).
V3. If special values of IGT are required, choose at least two items from those listed in the table below. (Example: AB, BC)
0.2
1
Item A B C
IGT (µA)
1 ~ 30
20 ~ 50
40 ~ 100
The above values do not include the current flowing through the 1kresistance between the gate and cathode.
Limits
Typ.
Max.
0.1
0.1
1.9
0.8
100 V 3
3
70
Unit
mA
mA
V
V
V
µA
mA
°C/W
V4. IGT, VGT measurement circuit.
A1
IGS IGT
TUT
A3 A2
3V
DC
RGK
1
V1
2
1k
VGT
SWITCH
60
6V
DC
SWITCH 1 : IGT measurement
SWITCH 2 : VGT measurement
(Inner resistance of voltage meter is about 1k)
PERFORMANCE CURVES
MAXIMUM ON-STATE CHARACTERISTICS
102
7 Ta = 25°C
5
3
2
101
7
5
3
2
100
7
5
3
2
10–1
012345
ON-STATE VOLTAGE (V)
RATED SURGE ON-STATE CURRENT
10
9
8
7
6
5
4
3
2
1
0
100 2 3 4 5 7 101 2 3 4 5 7 102
CONDUCTION TIME
(CYCLES AT 60Hz)
Feb.1999


Part Number CR05AS
Description LOW POWER USE NON-INSULATED TYPE/ PLANAR PASSIVATION TYPE
Maker Mitsubishi Electric Semiconductor
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