CR05BS-8
Parameter
RMS on-state current
Average on-state current
Symbol
IT (RMS)
IT (AV)
Ratings
0.15
0.1
Surge on-state current
I2t for fusing
ITSM
10
I2t 0.4
Peak gate power dissipation
Average gate power dissipation
Peak gate forward voltage
Peak gate reverse voltage
Peak gate forward current
Junction temperature
PGM
PG (AV)
VFGM
VRGM
IFGM
Tj
0.1
0.01
6
6
0.1
– 40 to +125
Storage temperature
Tstg – 40 to +125
Mass
— 11
Notes: 1. With gate to cathode resistance RGK = 1 kΩ.
Unit
A
A
A
A2s
W
W
V
V
A
°C
°C
mg
Conditions
Commercial frequency, sine half wave
180° conduction, Ta = 55°C
60Hz sine half wave 1 full cycle,
peak value, non-repetitive
Value corresponding to 1 cycle of half
wave 60Hz, surge on-state current
Typical value
Electrical Characteristics
Parameter
Repetitive peak reverse current
Repetitive peak off-state current
Symbol
IRRM
IDRM
On-state voltage
VTM
Gate trigger voltage
Gate non-trigger voltage
VGT
VGD
Gate trigger current
Holding current
IGT
IH
Thermal resistance
Rth (j-a)
Min.
—
—
—
—
0.2
20
—
—
Typ.
—
—
—
—
—
—
—
—
Max.
0.1
0.1
1.9
0.8
—
100
3.0
500
Unit
mA
mA
V
V
V
µA
mA
°C/W
Test conditions
Tj = 125°C, VRRM applied
Tj = 125°C, VDRM applied,
RGK = 1 kΩ
Ta = 25°C, ITM = 1.5 A,
instantaneous value
Tj = 25°C, VD = 6 V, IT = 0.1 A
Tj = 125°C, VD = 1/2 VDRM,
RGK = 1 kΩ
Tj = 25°C, VD = 6 V, IT = 0.1 A
Tj = 25°C, VD = 12 V,
RGK = 1 kΩ
Junction to ambient
REJ03G0347-0200 Rev.2.00 Mar 22, 2007
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