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RA60H1317M Datasheet, Mitsubishi Electric

RA60H1317M modules equivalent, silicon rf power modules.

RA60H1317M Avg. rating / M : 1.0 rating-11

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RA60H1317M Datasheet

Features and benefits


* Enhancement-Mode MOSFET Transistors (IDD≅0 @ VDD=12.5V, VGG=0V)
* Pout>60W, ηT>40% @ VDD=12.5V, VGG=5V, Pin=50mW
* Broadband Frequency Range: 135-175MHz

Image gallery

RA60H1317M Page 1 RA60H1317M Page 2 RA60H1317M Page 3

TAGS
RA60H1317M
Silicon
Power
Modules
RA60H3847M1
RA60H4047M1
RA60H4452M1
Mitsubishi Electric
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