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RA60H4452M1 - Silicon RF Power Modules

Description

The RA60H4452M1 is a 60-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 440- to 520-MHz range.

The battery can be connected directly to the drain of the enhancement-mode MOSFET transistors.

Features

  • Enhancement-Mode MOSFET Transistors (IDD≅0 @ VDD=12.5V, VGG=0V).
  • Pout>60W, ηT>40% @ VDD=12.5V, VGG=5V, Pin=50mW.
  • Broadband Frequency Range: 440-520MHz.
  • Metal shield structure that makes the improvements of spurious www. DataSheet4U. com radiation simple.
  • Low-Power Control Current IGG=5mA (typ) @ VGG=5V.
  • Module Size: 67 x 18 x 9.9 mm.
  • Linear operation is possible by setting the quiescent drain current with the gate voltages and control.

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Full PDF Text Transcription (Reference)

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MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA60H4452M1 BLOCK DIAGRAM 2 3 RoHS Compliance, 440-520MHz 60W 12.5V, 2 Stage Amp. For MOBILE RADIO DESCRIPTION The RA60H4452M1 is a 60-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 440- to 520-MHz range. The battery can be connected directly to the drain of the enhancement-mode MOSFET transistors. Without the gate voltage (VGG=0V), only a small leakage current flows into the drain and the nominal output signal (Pout=60W) attenuates up to 60 dB. The output power and the drain current increase as the gate voltage increases. The output power and the drain current increase substantially with the gate voltage around 0V(minimum).