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RA60H3847M1 Datasheet Preview

RA60H3847M1 Datasheet

Silicon RF Power Modules

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< Silicon RF Power Modules >
RA60H3847M1
RoHS Compliance, 378-470MHz 60W 12.5V, 2 Stage Amp. For MOBILE RADIO
DESCRIPTION
The RA60H3847M1 is a 60-watt RF MOSFET Amplifier
Module for 12.5-volt mobile radios that operate in the 378- to
470-MHz range.
The battery can be connected directly to the drain of the
enhancement-mode MOSFET transistors. Without the gate
voltage (VGG=0V), only a small leakage current flows into the
drain and the nominal output signal (Pout=60W) attenuates up to
60 dB. The output power and the drain current increase as the
gate voltage increases. The output power and the drain current
increase substantially with the gate voltage around 0V(minimum).
The nominal output power becomes available at the state that
VGG is 4V (typical) and 5V (maximum).
This module is designed for non-linear FM modulation,
but may also be used for linear modulation by setting the
drain quiescent current with the gate voltage and controlling
the output power with the input power.
BLOCK DIAGRAM
2
3
1
4
5
FEATURES
• Enhancement-Mode MOSFET Transistors
(IDD 0 @ VDD=12.5V, VGG=0V)
• Pout>60W, T>40% @ VDD=12.5V, VGG=5V, Pin=50mW
• Broadband Frequency Range: 378-470MHz
• Metal shield structure that makes the improvements of spurious
radiation simple
• Module Size: 67 x 19.4 x 9.9 mm
• Linear operation is possible by setting the quiescent drain
current with the gate voltages and controlling the output power
with the input power.
1 RF Input (Pin)
2 Gate Voltage (VGG), Power Control
3 Drain Voltage (VDD), Battery
4 RF Output (Pout)
5 RF Ground (Case)
PACKAGE CODE: H2M
RoHS COMPLIANCE
• RA60H3847M1 is a RoHS compliant product.
• RoHS compliance is indicate by the letter “G” after the Lot Marking.
• This product include the lead in the Glass of electronic parts and the
lead in electronic Ceramic parts.
However, it is applicable to the following exceptions of RoHS Directions.
1.Lead in the Glass of a cathode-ray tube, electronic parts, and
fluorescent tubes.
2.Lead in electronic Ceramic parts.
ORDERING INFORMATION:
ORDER NUMBER
SUPPLY FORM
RA60H3847M1-501
Antistatic tray,
10 modules/tray
Publication Date :Jun. 2017
1




Mitsubishi

RA60H3847M1 Datasheet Preview

RA60H3847M1 Datasheet

Silicon RF Power Modules

No Preview Available !

< Silicon RF Power Modules >
RA60H3847M1
RoHS Compliance, 378-470MHz 60W 12.5V, 2 Stage Amp. For MOBILE RADIO
MAXIMUM RATINGS (Tcase=+25°C, ZG=ZL=50 , unless otherwise specified)
SYMBOL PARAMETER
CONDITIONS
VDD Drain DC Supply Voltage
VGG=5V, Pin=0W
VDD Drain DC Supply Voltage
VGG5V
VGG Gate DC Supply Voltage
VDD12.5V, Pin=50mW
IDD Total Current
-
Pin
Pout
Tcase(OP)
Input Power
Output Power
Operation Case Temperature Range
f=378-470MHz,
VGG 5V
Tstg Storage Temperature Range
The above parameters are independently guaranteed.
RATING
17
17
6
15
100
80
-30 to +100
-40 to +110
UNIT
V
V
V
A
mW
W
°C
°C
ELECTRICAL CHARACTERISTICS (Tcase=+25°C, ZG=ZL=50 , unless otherwise specified)
SYMBOL PARAMETER
CONDITIONS
f Frequency Range
Pout Output Power
T Total Efficiency
2f0 2nd Harmonic
3f0 3 rd Harmonic
VDD=12.5V, VGG=5V, Pin=50mW
in Input VSWR
IDD Leakage Current
VDD=17V, VGG=0V, Pin=0W
VDD=15.2V, Pin=50mW,
— Load VSWR Tolerance Pout=60W (VGG control),
Load VSWR=20:1(All phase)
— Stability
VDD=10/12.5/15.2V, Pin=25/50/70mW,
Pout65W (VGG control),
Load VSWR=3:1(All phase)
All parameters, conditions, ratings, and limits are subject to change without notice.
MIN TYP MAX UNIT
378 - 470 MHz
60 -
-W
40 -
-%
- - -35 dBc
- - -40 dBc
- - 3:1 —
- - 1 mA
No degradation or
destroy
No parasitic oscillation
more than -60dBc
Publication Date :Jun. 2017
2


Part Number RA60H3847M1
Description Silicon RF Power Modules
Maker Mitsubishi
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