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Mitsubishi

MGFG5H1503 Datasheet Preview

MGFG5H1503 Datasheet

Ku band GaN MMIC Power Amplifier

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< Ku band GaN MMIC Power Amplifier>
MGFG5H1503
13.75 – 14.5 GHz BAND / 20W
Description
The MGFG5H1503, a 20W 4-stage GaN MMIC Power Amplifier including a
linearizer, is designed as a driver amplifier for a 50W Internally Matched
FET MGFK47G3745A.
Features
High output power: 43dBm
Input and output matched to 50Ohm
DC block capacitors built in
0.25um GaN HEMT Technology
Independently adjustable bias pins
Compact metal package with screw holes
Application
Transmitter for Ku-band SATCOM
Quality
General & Industrial
Absolute Maximum Ratings (Ta=25C)
Symbol
Parameter
Vd Drain to Source Voltage
Vg Gate to Source Voltage
Vl Linearizer Voltage
Pin RF Input Power
Vd_on Drain to Source Voltage under RF operation
Tch Cannel Temperature
Tstg Storage Temperature
*1: Tc=25
Ratings
30
-10
10
30
27
230
-55 to 125
Unit
V
V
V
dBm
V
C
C
Outline Drawing
Unit: millimeter
13.8
7.6
2.5
0.25
2.2
Recommended Operating Conditions
Symbol
Parameter
Vd Drain Voltage
IdqB Drain Current of buffer amp. without RF Drive
Idq1 Drain Current of 1st stage without RF Drive
Idq2 Drain Current of 2ndstage without RF Drive
Idq3 Drain Current of 3rd stage without RF Drive
Vg Gate Voltage
Vl Control Voltage of Linearizer
Tch Channel Temperature
Typ.
24
180
360
720
1440
-2.7 to -1.7
0
175
Unit
V
mA
mA
mA
mA
V
V
0.8
1.44
0.1
Publication Date : Dec, 2014
CSTG-16313
1




Mitsubishi

MGFG5H1503 Datasheet Preview

MGFG5H1503 Datasheet

Ku band GaN MMIC Power Amplifier

No Preview Available !

Electrical Characteristics
Symbol
Parameter
Test conditions
Vg(off)
Gate to source cut-off voltage
Freq.
Psat *1
Glp *2
IM3 *3
Operational Frequency
Saturated Power
Linear Power Gain
3rd Order Intermodulation Distortion
Rth(ch-c) *4 Thermal resistance
*4 :Channel-case
Vd=24V, IdB=1.2mA
Id1=2.4mA, Id2=4.8mA, Id3=9.6mA
Vd=24V, Vl=0V
IdqB=180mA, Idq1=360mA,
Idq2=720mA, Idq3=1440mA,
*1: Pin=27dBm *2,: Pin=0dBm
*3: Pout=34dBm (SCL)
ΔVf method
ESD *5 Class 0
Human Body Model (HBM)
*5 : Standard: JEDEC
Specifications are subject to change without notice.
Limits
Min. Typ. Max.
-5 - -2
13.75 - 14.5
41 43
-
18 20
-
-25
- 1.2 1.5
Unit
V
GHz
dBm
dB
dBc
C/W
13 12 11 10 9 8
14
1 23 4 5 6
Pin Configuration
Pin Number Symbol
Description
1 VdB Drain Voltage of Buffer Stage
2 Vd1 Drain Voltage of 1st Stage
3 Vg2 Gate Voltage of 2nd Stage
4 Vd2 Drain Voltage of 2nd Stage
5 Vg3 Gate Voltage of 3rd Stage
6 Vd3 Drain Voltage of 3rd Stage
7 Pout RF Output
78
9
Vd3 Drain Voltage of 3rd Stage
Vg3 Gate Voltage of 3rd Stage
10 Vd2 Drain Voltage of 2nd Stage
11 Vd1 Drain Voltage of 1st Stage
12 VgB1 Gate Voltage of 1st Stage and Buffer Stage
13 Vl Control Voltage of Linearizer
14 Pin RF Input
Vl: Control voltage to optimize distortion characteristics
such as AMAM, AMPM, and IMD.
Vg3 and Vd1,2,3 must be biased from both sides as follows:
Vd1: 2 and 11
Vd2: 4 and 10
Vg3: 5 and 9
Vd3: 6 and 8
Publication Date : Dec, 2014
CSTG-16313
2


Part Number MGFG5H1503
Description Ku band GaN MMIC Power Amplifier
Maker Mitsubishi
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