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MGF0910A - High-power GaAs FET

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Mitsubishi

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MGF0910A High-power GaAs FET by Mitsubishi - Datasheet Preview — Datasheet preview – MGF0910A

Datasheet Details

Part number	MGF0910A
Manufacturer	Mitsubishi
File Size	537.65 KB
Description	High-power GaAs FET
Datasheet	MGF0910A Datasheet
Additional preview pages of the MGF0910A datasheet.

Product details

Description

The MGF0910A, GaAs FET with an N-channel schottky gate, is designed for use L & S band amplifiers.

Features

Class A operation.
High output power P1dB=38.0dBm(T. Y. P) @f=2.3GHz.
High power gain GLP=11.0dB(TYP. ) @f=2.3GHz.
High power added efficiency P. A. E=45%(TYP. ) @f=2.3GHz,P1dB.
Hermetically sealed metal-ceramic package with ceramic lid.

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Published: Apr 29, 2005 |