XP1000 - GaAs MMIC Power Amplifier

Product Overview

Mimix Broadband

Datasheet Details

Part number	XP1000
Manufacturer	Mimix Broadband
File Size	1.00 MB
Description	GaAs MMIC Power Amplifier
Datasheet	XP1000 Datasheet
Additional preview pages of the XP1000 datasheet.

Product details

Description

Absolute Maximum Ratings Supply Voltage (Vd) Supply Current (Id) Gate Bias Voltage (Vg) Input Power (Pin) Storage Temperature (Tstg) Operating Temperature (Ta) Channel Temperature (Tch) +6.0 VDC 700 mA +0.3 VDC +9.0 dBm -65 to +165 OC -55 to MTTF Table 4 MTTF Table 4 (4) Channel temperature affects a device's MTTF.It is recommended to keep channel temperature as low as possible for maximum life.Electrical Characteristics (Ambient Temperature T = 25 oC) Parameter Frequency Range (f ) Input R

Features

High Linearity Output Amplifier Balanced Design Provides Good Input/Output Match On-Chip Temperature Compensated Output Power Detector 19.0 dB Small Signal Gain +36.0 dBm Third Order Intercept (OIP3) 100% On-Wafer RF, DC and Output Power Testing 100% Visual Inspection to MIL-STD-883 Method 2010 P1000 Mimix Broadband’s two stage 17.0-24.0 GHz GaAs MMIC power amplifier is optimized for linear operation with a third order intercept point of +36.0 dBm. The device also includes Lange couplers to ac.

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Published: May 25, 2007 |