MSAHZ52F120A transistor equivalent, n-channel insulated gate bipolar transistor.
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Rugged polysilicon gate cell structure high current handling capability, latch-proof Hermetically sealed, surface mount p.
Collector-to-Emitter Breakdown Voltage (Gate Shorted to Emitter)
@ TJ ≥ 25°C
SYMBOL BVCES BVCGR VGES VGEM IC25 IC90 ICM(25) ICM(90) EAS IC(sc) IC(sc)RBSOA PD Tj Tstg IS ISM θJC
MAX. 1200 1200 +/-20 +/-30 52 33 104 66 65 260 66 300 -55 to +150 -55 t.
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