MSAHX60F60A transistor equivalent, n-channel insulated gate bipolar transistor.
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Rugged polysilicon gate cell structure high current handling capability, latch-proof Hermetically sealed, surface mount p.
Collector-to-Emitter Breakdown Voltage (Gate Shorted to Emitter)
@ TJ ≥ 25°C
SYMBOL BVCES BVCGR VGES VGEM IC25 IC90 ICM Imax PD Tj Tstg IS ISM θJC
MAX. 600 600 +/-20 +/-30 60 32 120 64 300 -55 to +150 -55 to +150 32 100 0.4
UNIT Volts Volts Volts .
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