INSULATED Datasheet | Specifications & PDF Download

MITSUBISHI DIODE MODULES RM50TC-M,-H,-24,-2H MEDIUM POWER GENERAL USE INSULATED TYPE RM50TC-M,-H,-24,-2H • IO • VRRM DC output current

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PD- 94117 IRGP20B120U-E INSULATED GATE BIPOLAR TRANSISTOR Features • UltraFast Non Punch Through (NPT) Technology • 10 µs Short Circuit capability •

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PD 91459B IRG4PC30F INSULATED GATE BIPOLAR TRANSISTOR Features www.DataSheet4U.com C Fast Speed IGBT • Fast: Optimized for medium operating frequen

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www.datasheet4u.com PD -95965 IRG4BC20FD-SPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • Fast: Optimized for me

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MITSUBISHI DIODE MODULES RM30TA-M,-H MEDIUM POWER GENERAL USE INSULATED TYPE RM30TA-M,-H DC output current 75A Repetitive pe

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NTE3320 Insulated Gate Bipolar Transistor N–Channel Enhancement Mode, High Speed Switch Features: D High Input Impedance D High Speed D Low Saturation

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PD -91595A IRG4BC30KD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • High short circuit rating optimized for motor c

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IRGP4063DPbF IRGP4063D-EPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • • • • • • • • • • Low VCE (ON) Trench IGBT

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IRGB4062DPbF IRGP4062DPbF IRGP4062D-EPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features C • Low VCE (ON) Trench IG

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PD 91464B IRG4PC40FD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • Fast: Optimized for medium operating frequencies

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PD - 95646 IRG4PC40KPbF INSULATED GATE BIPOLAR TRANSISTOR Features • Short Circuit Rated UltraFast: Optimized for high operating frequencies >5.0 kHz

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PD - 97576 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • • • • • • • • • Low VCE (ON) Trench IGBT Technology Low Sw

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VCES = 600V IRGS4640DPbF IRGSL4640DPbF IRGB4640DPbF IRGP4640D(-E)PbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode C IC = 40A

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MITSUBISHI DIODE MODULES RM50D2Z-40 HIGH VOLTAGE MEDIUM POWER GENERAL USE INSULATED TYPE RM50D2Z-40 Average forward current 50A Repeti

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Previous Datasheet Index Next Data Sheet PD - 9.794 IRGBC30FD2 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • Swi

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www.DataSheet4U.com PD - 94921 IRG4PC30KPbF INSULATED GATE BIPOLAR TRANSISTOR Features • High short circuit rating optimized for motor control, tsc

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www.DataSheet4U.com PD -95636 IRG4IBC20WPbF INSULATED GATE BIPOLAR TRANSISTOR Features • Designed expressly for Switch-Mode Power Supply and PFC (

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www.DataSheet.co.kr GT100DA120U Vishay Semiconductors Insulated Gate Bipolar Transistor (Trench IGBT), 100 A FEATURES • Trench IGBT technology tempe

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www.DataSheet.co.kr PD - 94290 GA100NA60U INSULATED GATE BIPOLAR TRANSISTOR Features • UltraFastTM: Optimized for minimum saturation voltage and ope

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