MSAGZ52F120A datasheet, transistor equivalent, Microsemi Corporation

MSAGZ52F120A transistor equivalent, n-channel insulated gate bipolar transistor.

Avg. rating / M : 1.0 rating-1

datasheet Download (Size : 69.99KB)

Features and benefits

*
*
*
*
*
*
*
* Rugged polysilicon gate cell structure high current handling capability, latch-proof Hermetically sealed, surface mount p.

Description

Collector-to-Emitter Breakdown Voltage (Gate Shorted to Emitter) @ TJ ≥ 25°C SYMBOL BVCES BVCGR VGES VGEM IC25 IC90 ICM(25) ICM(90) EAS IC(sc) IC(sc)RBSOA PD Tj Tstg IS ISM θJC MAX. 1200 1200 +/-20 +/-30 52 33 104 66 65 260 66 300 -55 to +150 -55 t.

Image gallery