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* Low Forward Voltage Drop, Low Tail Current Avalanche and Surge Rated High Freq. Switching to 20KHz Ultra Low Leakage Current RBSOA and SCS.

DESCRIPTION:
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* N-Channel enhancement mode high density IGBT die Passivation: Polyimide, 20 um, over Sil.

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* N-Channel enhancement mode high density IGBT die Passivation: Polyimide, 20 um, over Silicon Nitride, .8um Emitter Metallization: Al/1%Si for aluminum wire bonding, 3.2 um typical.
* Collector/Gate Metallization: Ti
 &.

MSAGX60F60A

MSAGX75F60A

MSAGX75L60A

MSAGZ52F120A

MSA-0100

MSA-0104

MSA-0135

MSA-0136

MSA-0170

MSA-0185

MSA-0186

MSA-0200

MSA-0204

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