MS1076 transistors equivalent, rf & microwave transistors.
* 30 MHz
* 28 VOLTS
* GOLD METALLIZATION
* POUT = 220 W PEP
* GP = 12 dB GAIN MINIMUM
* COMMON EMITTER CONFIGURATION
DESCRIPTION:
The MS1076 is a .
Features
* 30 MHz
* 28 VOLTS
* GOLD METALLIZATION
* POUT = 220 W PEP
* GP = 12 dB GAIN MINIMUM
*.
The MS1076 is a 28 volt epitaxial NPN silicon planar transistor designed primarily for SSB and VHF communications. This device utilizes an emitter ballasted die geometry for maximum ruggedness and reliability.
MS1076
ABSOLUTE MAXIMUM RATINGS (Tcas.
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