MS1076 transistors equivalent, rf & microwave transistors.
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* 30 MHz 28 VOLTS GOLD METALLIZATION POUT = 220 W PEP GP = 12 dB GAIN MINIMUM COMMON EMITTER CONFIGURATION
DESCRIPTION:
The MS1076 is a.
Features
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* 30 MHz 28 VOLTS GOLD METALLIZATION POUT = 220 W PEP GP = 12 dB GAIN MINIMU.
The MS1076 is a 28 volt epitaxial NPN silicon planar transistor designed primarily for SSB and VHF communications. This device utilizes an emitter ballasted die geometry for maximum ruggedness and reliability.
ABSOLUTE MAXIMUM RATINGS (Tcase = 25° .
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