* RDS(ON)≦5.6mΩ@VGS=-20V
* RDS(ON)≦6mΩ@VGS=-10V
* RDS(ON)≦8mΩ@VGS=-4.5V
* Super high density cell design for extremely low RDS(ON)
* Exceptional on-re.

* Power Management in Note book
* DC/DC Converter
* Load Switch
* LCD Display inverter * The Ordering I.

The ME95P03 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are parti.

ME95P03-G

ME95N03

ME95N03-G

ME95N03T

ME95N03T-G

ME95N04

ME95N04-G

ME95N10F

ME95N10F-G

ME95N10T

ME95N10T-G

ME90N03

ME90N03-G

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