* RDS(ON)≦11mΩ@VGS=10V
* RDS(ON)≦19.5mΩ@VGS=4.5V
* Super high density cell design for extremely low RDS(ON)
* Exceptional on-resistance and maximum DC cur.

* Power Management in Note book
* NB/MB Vcore Low side switching
* Portable Equipment
* Battery Powered .

The ME7688 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are parti.

ME7686

ME7686-G

ME7688-G

ME7607

ME7607-G

ME7609D

ME7609D-G

ME7636

ME7636-G

ME7639

ME7639-G

ME7640

ME7640-G

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