RDS(ON) 2.5mΩ@VGS=10V RDS(ON) 3.3mΩ@VGS=4.5V Super high density cell design for extremely low RDS(ON) Exceptional on-resistance and maximum DC current capability APPLICAT.

Power Management in Note book NB/MB Vcore Low side switching Portable Equipment Battery Powered System DC/DC Converter L.

The ME7636 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are parti.

ME7636-G

ME7639

ME7639-G

ME7607

ME7607-G

ME7609D

ME7609D-G

ME7640

ME7640-G

ME7642

ME7642-G

ME7644

ME7644-G

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