* RDS(ON)≦11mΩ@VGS=-10V
* RDS(ON)≦14mΩ@VGS=-6V
* RDS(ON)≦18mΩ@VGS=-4.5V
* Super high density cell design for extremely low RDS(ON)
* Exceptional on-re.

* Power Management in Note book
* Portable Equipment
* Battery Powered System
* DC/DC Converter
* Lo.

The ME7639 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are parti.

ME7639

ME7636

ME7636-G

ME7607

ME7607-G

ME7609D

ME7609D-G

ME7640

ME7640-G

ME7642

ME7642-G

ME7644

ME7644-G

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