* RDS(ON)≦10.5mΩ@VGS=10V
* RDS(ON)≦18mΩ@VGS=4.5V
* Super high density cell design for extremely low RDS(ON)
* Exceptional on-resistance and maximum DC cur.

* Power Management in Note book
* NB/MB High side switching
* Battery Powered System
* DC/DC Converter <.

The ME7686-G is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are par.

ME7686-G

ME7688

ME7688-G

ME7607

ME7607-G

ME7609D

ME7609D-G

ME7636

ME7636-G

ME7639

ME7639-G

ME7640

ME7640-G

Since 2006. D4U Semicon.   |   Contact Us   |   Privacy Policy   |   Purchase of parts