30V/3.0A,RDS(ON)=15 GS=10V 30V/3.0A,RDS(ON)=20 GS=4.5V Super high density cell design for extremely low RDS (ON) DFN2X2-6L package design Application DC/DC Conver.

Pin Description ( DFN2X2-6L ) Features 30V/3.0A,RDS(ON)=15 GS=10V 30V/3.0A,RDS(ON)=20 GS=4.5V Super high density .

ME7204, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial indu.

ME7202

ME7202-G

ME7203

ME700802

ME700803

ME701202

ME701203

ME701602

ME701603

ME7027A

ME7044A

ME70N03

ME70N03A

Since 2006. D4U Semicon.   |   Contact Us   |   Privacy Policy   |   Purchase of parts