ME7203 datasheet, mosfet equivalent, Matsuki

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Features and benefits

-30V/-5.3A,RDS(ON)=30 GS=-10V -30V/-4.2A,RDS(ON)=40 GS=-4.5V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC cu.

Application

Pin Description ( DFN2X2-6L ) Features -30V/-5.3A,RDS(ON)=30 GS=-10V -30V/-4.2A,RDS(ON)=40 GS=-4.5V Super high de.

Description

ME7203, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, such as smart phone and notebook computer and other batt.

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