ME7202-G Description
The ME7202 is the dual N-Channel + P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook puter power management and other battery powered circuits where high-side...
ME7202-G Key Features
- RDS(ON) ≦ 31 mΩ@VGS=4.5V (N-Ch)
- RDS(ON) ≦ 43 mΩ@VGS=2.5V(N-Ch)
- RDS(ON) ≦ 74 mΩ@VGS=1.8V(N-Ch)
- RDS(ON) ≦ 73mΩ@VGS=-4.5V(P-Ch)
- RDS(ON) ≦ 120 mΩ@VGS=-2.5V(P-Ch)
- RDS(ON) ≦ 240 mΩ@VGS=-1.8V(P-Ch)
- Super high density cell design for extremely low RDS(ON)
- Exceptional on-resistance and maximum DC current