ME3205T-G mosfet equivalent, n-channel mosfet.
* RDS(ON)≦6.5mΩ@VGS=10V
* Super high density cell design for extremely low RDS(ON)
* Exceptional on-resistance and maximum DC current
capability
APPLICATIONS
.
* Power Management
* DC/DC Converter
PIN CONFIGURATION
(TO-220) Top View
* TheOrdering Information: ME3205T (P.
The ME3205T is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are parti.
Image gallery
TAGS
Download (Size : 933.39KB)